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IGBT-Based Power Semiconductor Market, By Type

RA00151

IGBT-Based Power Semiconductor Market, By Type (Discrete, Modules, IC’s), By Application (Consumer Electronics, Industrial Technology, Energy Sector, Aerospace, Automotive), Regional Analysis (North America, Europe, Asia-Pacific, LAMEA): Global Opportunity Analysis and Industry Forecast, 2019–2026

RA00151

Pages: 170

Mar 2020

Global IGBT-Based Power Semiconductor Market Insights 2026:

Global Insulated Gate Bipolar Transistor(IGBT)-Based Power Semiconductor market forecast will surpass $ 20,103.1 million by 2026, rising from $ 5,495.5million in 2018, at a CAGR of 17.6%. On the basis of region, the Asia-Pacific region held the largest market share accounting for $ 1,868.5 million. European region is expected to boost the global IGBT-Based Power Semiconductors Market accounting for $4,812.7 million by 2026.

The insulated gate bipolar transistor (IGBT) is a combination of metal–oxide–semiconductor field-effect transistor (MOSFET) and Bipolar junction transistor (BJT). A wide range of modern electronicssuch as VSFs (variable speed refrigerators),VFDs (Variable Frequency Drives), trains, electric cars, stereo systems with switching amplifiers,and air conditioners use insulated-gate bipolar transistor for switching the electric power.

The simpler driver circuits in IGBT and huge resistance power towards high voltages is anticipated to drive the IGBT-Based Power Semiconductors Market

IGBT exhibits better properties compared to BJT when used in high-power consuming circuits. The switching frequency of the insulated gate bipolar transistors is very high as compared to bipolar junction transistors. IGBT provides better thermal performance efficiency due to which it is widely used in invertors, electronic items and others. In addition, IGBTs are widely used in power electronics applications such as converters and power supplies, due to the switching speed of the IGBT. These are the key driving factors for the IGBT-Based Power Semiconductors market. 

The discrete type segment held the largest market share in 2018 accounting for majorIGBT-Based Power Semiconductor marketin 2018accounting for $3,170.0 million. However, modules segment is anticipated to register the highest growth rate during the projectedtimeframe growing at a CAGR of 18.6%. The modules segment is expected to witness substantial growth over the forecast period; this is majorly due to rapid growth in the preferencesof thin electronics such as ultra-thin phones, compact laptops and others.

The consumer electronics segment held the largest market value in 2018 accounting for $1,517.1 million and is anticipated to reach $5,430.0 million by 2026, growing at a CAGR of 17.3% during the forecast period.The growth is majorly due to the swift rise in the adoption of consumer electronics products such as mobiles, televisions, laptops and many others. Industrial technology segment is expected to hold the largest market share during the forecasted timeframe, accounting for $3,207.8 million, growing at a CAGR of 18.6% during the forecast period. Thisis majorlydue to the rising electronic components in the automotive industry due to the rapid growth in the demand for autonomous vehicles and OEM’s concentrating more on car as well as the driver safety features.

IGBT-Based Power Semiconductors Market, Regional Insights:

Europe region will have enormous opportunities for the market investors to grow over the coming years

Asia-PacificIGBT-Based Power Semiconductorindustryheld the largest market share in the year 2018 accounting for $1,868.5 million and is further anticipated to grow at a CAGR of 17.2% during the forecast period. The growth is owing to the increasing demand for electronic devices in this region. On the other hand, the Europe market is anticipated to experience a swift growth over the forecast period, majorly due to the growing adoption of electric vehicles across the region.

IGBT-Based Power Semiconductor market players includeMitsubishi, Infineon Technologies,STMicroelectronics, Semikron, Fuji Electric, Fairchild Semiconductors, ON Semiconductors, Texas Instruments Incorporated, IXYS and Toshiba among others. Acquisitions and product development are the key strategies that are being opted by the key industry participants to continue their market position in the regional and global markets.The IGBT-Based power semiconductors key players are prominentlyfocusingon technologicaldevelopments, mergers and acquisitions,new product launches, and geographical expansion. These are some of the growth strategies adopted by these companies.

In January 2020, Infineon announced about the development of new customer-specific solutions for SMA which includes both CoolSiC MOSFET and TRENCHSTOP IGBT along with body diode. This device will allow topology system voltages upto 1500 V to be switched with the help of switches that are designed for 1200 V.

Porter’s Five Forces Analysis for Content Marketing Market:

1 Bargaining Power of Suppliers: There is a presence of many key manufacturers in IGBT-Based Power Semiconductors.
The bargaining power of suppliers is High.

2 Bargaining Power of Consumers:In this market, the number of consumers is high. 
The bargaining power of consumers is High.

3 Threat of new entrants: 

  •  There is growing demand from the developing countries

  •  There exists a lack of geographical presence of key players in developing countries

  •  There is Moderate initial investment to start a IGBT-based semiconductor company 

  • The threat of new entrants is Medium.

4 Threat of substitutes:

The only alternative for IGBT can be MOSFET but the lack of handling high voltages is a major drawback for MOSFET; there is no substitute for IGBT.
The threat of substitutes is High.

5 Competitive rivalry in the industry:

This market contains a very few number of market participants. Many of the key players are following similar strategies for the improvement of technologies.
The competitive rivalry in the industry is high.
 

Aspect

Particulars

  Historical Market Estimations

  2018-2019

  Base Year for Market Estimation

  2018

  Forecast timeline for Market Projection

  2019-2026

  Geographical Scope

  North America, Europe, Asia-Pacific, LAMEA

  Segmentation by Type

  • Discrete

  • Module

  • IC’s

  Segmentation by Application

  • Consumer Electronics

  • Industrial Technology

  • Energy Sector

  • Aerospace

  • Automotive

  Key Countries Covered

U.S., Canada, Germany, France, Spain, Russia, Japan, China, India, South Korea, Australia, Latin America, Middle East and Africa

  Key Companies Profiled

  • Infineon Technologies

  • Mitsubishi

  • Fuji Electric

  • Semikron

  • ON Semiconductors

  • Fairchild Semiconductors

  • Texas Instruments Incorporated

  • STMicroelectronics

  • IXYS

  • Toshiba

 


FREQUENTLY ASKED QUESTIONS?
 

A. The global IGBT-Based Power Semiconductor market size was over $5,495.5 million in 2018, and is further anticipated to reach $20,103.0 million by 2026.

A. Infineon Technologies and Mitsubishiare some of the key players in the global IGBT-Based Power Semiconductor market.

A. Europe possesses great investment opportunities for the investors to witness the most promising growth in the coming years.

A. EuropeIGBT-Based Power Semiconductor market is projected to grow at 40.30% CAGR during the forecast period.

A. Product development and joint ventures are the key strategies opted by the operating companies in this market.

A. Infineon Technologies, Mitsubishi, and Fuji Electricareinvesting more in R&D activities for developing new products and technologies.

1 Research Methodology

1.1 Desk Research
1.2 Real time insights and validation
1.3 Forecast model
1.4 Assumptions and forecast parameters

1.4.1 Assumptions
1.4.2 Forecast parameters

1.5 Data sources

1.5.1 Primary
1.5.2 Secondary

2 Executive Summary

2.1 360° summary
2.2 Type trends
2.3 Application trends

3 Market overview

3.1 Market segmentation & definitions
3.2 key takeaways

3.2.1 Top investment pockets
3.2.2 Top winning strategies

3.3 Porter’s five forces analysis

3.3.1 Bargaining power of consumers
3.3.2 Bargaining power of suppliers
3.3.3 Threat of new entrants
3.3.4 Threat of substitutes
3.3.5 Competitive rivalry in the market

3.4 Market dynamics

3.4.1 Drivers
3.4.2 Restraints
3.4.3 Opportunities

3.5 Application landscape
3.6 Regulatory landscape
3.7 Patent landscape
3.8 Market value chain analysis
3.9 Strategic overview

4 IGBT- Based Power Semiconductor Market, by Type

4.1 Discrete

4.1.1 Market size and forecast, by region, 2016-2026
4.1.2 Comparative market share analysis, 2018 &2026

4.2 Module

4.2.1 Market size and forecast, by region, 2016-2026
4.2.2 Comparative market share analysis, 2018 &2026

4.3 IC’s

4.3.1 Market size and forecast, by region, 2016-2026
4.3.2 Comparative market share analysis, 2018 &2026

5 IGBT- Based Power Semiconductor Market, by Application

5.1 Consumer Electronics

5.1.1 Market size and forecast, by region, 2016-2026
5.1.2 Comparative market share analysis, 2018 &2026

5.2 Industrial Technology

5.2.1 Market size and forecast, by region, 2016-2026
5.2.2 Comparative market share analysis, 2018 &2026

5.3 Energy Sector

5.3.1 Market size and forecast, by region, 2016-2026
5.3.2 Comparative market share analysis, 2018 &2026

5.4 Aerospace

5.4.1 Market size and forecast, by region, 2016-2026
5.4.2 Comparative market share analysis, 2018 &2026

5.5 Automotive

5.5.1 Market size and forecast, by region, 2016-2026
5.5.2 Comparative market share analysis, 2018 &2026

5.6 Others

5.6.1 Market size and forecast, by region, 2016-2026
5.6.2 Comparative market share analysis, 2018 &2026

6 IGBT- Based Power Semiconductor Market, by Region

6.1 North America

6.2 Market size and forecast, by Type, 2016-2026
6.3 Market size and forecast, by Application, 2016-2026
6.4 Market size and forecast, by country, 2016-2026
6.5 Comparative market share analysis, 2018 &2026

6.5.1 U.S.

6.5.1.1 Market size and forecast, by Type, 2016-2026
6.5.1.2 Market size and forecast, by Application, 2016-2026
6.5.1.3 Comparative market share analysis, 2018 &2026

6.5.2 Canada

6.5.2.1 Market size and forecast, by Type, 2016-2026
6.5.2.2 Market size and forecast, by Application, 2016-2026
6.5.2.3 Comparative market share analysis, 2018 &2026

6.5.3 Mexico

6.5.3.1 Market size and forecast, by Type, 2016-2026
6.5.3.2 Market size and forecast, by Application, 2016-2026
6.5.3.3 Comparative market share analysis, 2018 &2026

6.6 Europe

6.6.1 Market size and forecast, by Type, 2016-2026
6.6.2 Market size and forecast, by Application, 2016-2026
6.6.3 Market size and forecast, by country, 2016-2026
6.6.4 Comparative market share analysis, 2018 &2026

6.6.5 UK

6.6.5.1 Market size and forecast, by Type, 2016-2026
6.6.5.2 Market size and forecast, by Application, 2016-2026
6.6.5.3 Comparative market share analysis, 2018 &2026

6.6.6 Germany

6.6.6.1 Market size and forecast, by Type, 2016-2026
6.6.6.2 Market size and forecast, by Application, 2016-2026
6.6.6.3 Comparative market share analysis, 2018 &2026

6.6.7 France

6.6.7.1 Market size and forecast, by Type, 2016-2026
6.6.7.2 Market size and forecast, by Application, 2016-2026
6.6.7.3 Comparative market share analysis, 2018 &2026

6.6.8 Spain

6.6.8.1 Market size and forecast, by Type, 2016-2026
6.6.8.2 Market size and forecast, by Application, 2016-2026
6.6.8.3 Comparative market share analysis, 2018 &2026

6.6.9 Italy

6.6.9.1 Market size and forecast, by Type, 2016-2026
6.6.9.2 Market size and forecast, by Application, 2016-2026
6.6.9.3 Comparative market share analysis, 2018 &2026

6.6.10 Rest of Europe

6.6.10.1 Market size and forecast, by Type, 2016-2026
6.6.10.2 Market size and forecast, by Application, 2016-2026
6.6.10.3 Comparative market share analysis, 2018 &2026

6.7 Asia-Pacific

6.7.1 Market size and forecast, by Type, 2016-2026
6.7.2 Market size and forecast, by Application, 2016-2026
6.7.3 Market size and forecast, by country, 2016-2026
6.7.4 Comparative market share analysis, 2018 &2026
6.7.5 China

6.7.5.1 Market size and forecast, by Type, 2016-2026
6.7.5.2 Market size and forecast, by Application, 2016-2026
6.7.5.3 Comparative market share analysis, 2018 &2026

6.7.6 Japan

6.7.6.1 Market size and forecast, by Type, 2016-2026
6.7.6.2 Market size and forecast, by Application, 2016-2026
6.7.6.3 Comparative market share analysis, 2018 &2026

6.7.7 India

6.7.7.1 Market size and forecast, by Type, 2016-2026
6.7.7.2 Market size and forecast, by Application, 2016-2026
6.7.7.3 Comparative market share analysis, 2018 &2026

6.7.8 Australia

6.7.8.1 Market size and forecast, by Type, 2016-2026
6.7.8.2 Market size and forecast, by Application, 2016-2026
6.7.8.3 Comparative market share analysis, 2018 &2026

6.7.9 South Korea

6.7.9.1 Market size and forecast, by Type, 2016-2026
6.7.9.2 Market size and forecast, by Application, 2016-2026
6.7.9.3 Comparative market share analysis, 2018 &2026

6.7.10 Rest of Asia-Pacific

6.7.10.1 Market size and forecast, by Type, 2016-2026
6.7.10.2 Market size and forecast, by Application, 2016-2026
6.7.10.3 Comparative market share analysis, 2018 &2026

6.8 LAMEA

6.8.1 Market size and forecast, by Type, 2016-2026
6.8.2 Market size and forecast, by Application, 2016-2026
6.8.3 Market size and forecast, by country, 2016-2026
6.8.4 Comparative market share analysis, 2018 &2026
6.8.5 Latin America

6.8.5.1 Market size and forecast, by Type, 2016-2026
6.8.5.2 Market size and forecast, by Application, 2016-2026
6.8.5.3 Comparative market share analysis, 2018 &2026

6.8.6 Middle East

6.8.6.1 Market size and forecast, by Type, 2016-2026
6.8.6.2 Market size and forecast, by Application, 2016-2026
6.8.6.3 Comparative market share analysis, 2018 &2026

6.8.7 Africa

6.8.7.1 Market size and forecast, by Type, 2016-2026
6.8.7.2 Market size and forecast, by Application, 2016-2026
6.8.7.3 Comparative market share analysis, 2018 &2026

1 Company profiles

1.1 InfineonTechnologies

1.1.1 Business overview
1.1.2 Financial performance
1.1.3 Type portfolio
1.1.4 Recent strategic moves & developments
1.1.5 SWOT analysis

1.2 Mitsubishi

1.2.1 Business overview
1.2.2 Financial performance
1.2.3 Type portfolio
1.2.4 Recent strategic moves & developments
1.2.5 SWOT analysis

1.3  Fuji Electric

1.3.1 Business overview
1.3.2 Financial performance
1.3.3 Type portfolio
1.3.4 Recent strategic moves & developments
1.3.5 SWOT analysis

1.4 Semikron

1.4.1 Business overview
1.4.2 Financial performance
1.4.3 Type portfolio
1.4.4 Recent strategic moves & developments
1.4.5 SWOT analysis

1.5 ON Semiconductors

1.5.1 Business overview
1.5.2 Financial performance
1.5.3 Type portfolio
1.5.4 Recent strategic moves & developments
1.5.5 SWOT analysis

1.6  FairchildSemiconductor

1.6.1 Business overview
1.6.2 Financial performance
1.6.3 Type portfolio
1.6.4 Recent strategic moves & developments
1.6.5 SWOT analysis

1.7 Texas Instruments Incorporated

1.7.1 Business overview
1.7.2 Financial performance
1.7.3 Type portfolio
1.7.4 Recent strategic moves & developments
1.7.5 SWOT analysis

1.8 STMicroelectronics

1.8.1 Business overview
1.8.2 Financial performance
1.8.3 Type portfolio
1.8.4 Recent strategic moves & developments
1.8.5 SWOT analysis

1.9 IXYS

1.9.1 Business overview
1.9.2 Financial performance
1.9.3 Type portfolio
1.9.4 Recent strategic moves & developments
1.9.5 SWOT analysis

1.10 Toshiba

1.10.1 Business overview
1.10.2 Financial performance
1.10.3 Type portfolio
1.10.4 Recent strategic moves & developments
1.10.5 SWOT analysis

The IGBT or Insulated-Gate Bipolar Transistor is basicallya semiconductor device with a three-terminal power. Typically, this device is widely used as an electronic switch in many industrial applications. As per the Research Dive blog , the IGBT is a combination of bipolar junction transistor (BJT) and MOFSET. In IGBT, the MOFSET’s simple gate-driven characteristics combines with the low-saturated voltage and high-currentproficiency of the bipolar transistor in a single device. A wide range of modern electronics such as variable frequency drives (VFDs), variable speed refrigerators (VSFs), electric cars, trains,air conditioners, and stereo systems use IGBTfor switching the electric power.

The IGBT-based power semiconductor devices have the best characteristics of the BJTs and MOSFETs. Similar to the metal-oxide semiconductor field-effect transistor (MOFSET), the IGBTs have low gate current requirements and high gate impedance. Similarly, compared to the BJTs, the IGBT device across the switch in the operating mode, it has low power loss and low on state voltage drop. The IGBTs condensed input capacitance improves the Miller feedback effect during high dt/dv turn off and turn on.

Recent Developments in the IGBT-Based Power Semiconductor Industry

Rising production of hybrid electric vehicles and electric vehicles all over the globe is increasing the demand of IGBT-based power semiconductor devices. For the automotive power semiconductor industry, the IGBTs is the largest segment. It is a switch that directly connects into the electric motor of hybrid electric or electric vehicles. China is however considered to be the largest market for electric vehicle all across the globe. On the other hand, the rising demand for self-driving cars, connected cars, Advanced Driver Assisted System (ADAS), and fuel-efficient vehicles is projected to boost the demand for IGBT-based power semiconductors industry.

In January 2020, Infineon Technologies AG announced about the development of new customer-specific solutions for SMA, which includes both CoolSiC MOSFET and TRENCHSTOP IGBT along with body diode. This device will allow topology system voltages upto 1500 V to be switched with the help of switches that are designed for 1200 V.

Fort Campbell of the U.S.A installed with super junction MOFSET and IGBT mechanisms in order to check military IDs and driving licenses in April 2018.

STMicroelectronics in November 2015, introduced the world’s first 1500V super-junction MOFSET and the product portfolio of TO-220 FullPAK (TO-220FP) wide creepage power transistors.

Forecast Analysis of IGBT-Based Power Semiconductor Market

Global market for IGBT-based power semiconductor  is anticipated to witness a positive growth during the forecast period. TheIGBTs are widely used in power electronics applications such as converters and power supplies, due to the switching speed of the IGBT. Owing to the switching speed of the IGBT, it is widely used in power electronics applications such as power supplies and convertors which is predicted to drive the market growth from 2019 to 2026.Moreover, growing investments in the R&D activities by the major players of the market is projected to create several growth opportunities in the global IGBT-based power semiconductor industry.

The huge resistance power of IGBTs towards high voltages is a significant factor giving a substantial uplift to the growth of global market. As per the Research Dive report statistics, the global IGBT-based power semiconductor market is likely to surpass $20.103.1 million by the end of 2026. Geographically, the Europe region is likely to dominate the industry owing to the rise in demand for electric vehicles in this region. Additionally, the report profiles prominent players operating in the global market who are focusing more on product developments to increase their market size in the IGBT-based power semiconductor industry all across the globe.
 

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